| 論文編號: | |
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| 論文題目: | Surface-induced large side-gating phenomenon in GaAs quantum wire transistors and its removal by surface passivation using Si interface control layer |
| 論文題目英文: | |
| 作者: | Jia, Rui; Kasai, Seiya; Wang, Qing; Long, Shi Bing; Niu, Jie Bin; Li, Zhi Gang; Liu, Ming |
| 論文出處: | |
| 刊物名稱: | Appl. Phys. Lett. |
| 年: | 2007 |
| 卷: | 90 |
| 期: | |
| 頁: | 132124 |
| 聯(lián)系作者: | Jia, Rui |
| 收錄類別: | |
| 影響因子: | |
| 摘要: | |
| 英文摘要: | |
| 外單位作者單位: | |
| 備注: | Keywords: gallium arsenide, III-V semiconductors, aluminium compounds, silicon, elemental semiconductors, semiconductor quantum wires, insulated gate field effect transistors, passivation, Fermi level |
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