| 論文編號(hào): | 1725110120160336 |
| 第一作者所在部門: | |
| 論文題目: | High Noise Margin 12T Subthreshold SRAM cell with Enhanced Read Speed and Eliminated Half-selected Problem |
| 論文題目英文: | |
| 作者: | 蔡江錚 |
| 論文出處: | |
| 刊物名稱: | Solid-State and Integrated Circuit Technology (ICSICT), 2016 13th IEEE International Conference on |
| 年: | 2016 |
| 卷: | |
| 期: | 1 |
| 頁(yè): | 1 |
| 聯(lián)系作者: | 黑勇 |
| 收錄類別: | |
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| 英文摘要: | |
| 外單位作者單位: | |
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