近五年完成和正在承擔(dān)的課題 主要有：
1. 教育部留學(xué)歸國(guó)啟動(dòng)資金資助項(xiàng)目“異質(zhì)結(jié)器件局部（局部隔離）熱處理技術(shù)”
2. 國(guó)家自然科學(xué)基金委員會(huì)與香港研究資助局聯(lián)合資助申請(qǐng)項(xiàng)目 “適于射頻/微波頻段的大功率低噪聲的深亞微米GaN異質(zhì)結(jié)場(chǎng)效應(yīng)管的研制”
3. 中國(guó)科學(xué)院微電子研究所所長(zhǎng)基金項(xiàng)目：“紫外日盲探測(cè)器及其陣列研制”
4. 973項(xiàng)目(納米材料與結(jié)構(gòu)在環(huán)境氣體污染物檢測(cè)與治理中的應(yīng)用基礎(chǔ)研究)一項(xiàng)(課題名稱:聲表面波氣體檢測(cè)方法與技術(shù)的研究)
另外作為主要骨干參與的課題：973項(xiàng)目“新一代化合物半導(dǎo)體電子器件與電路研究” AlGaN/GaN 微波功率器件
(1) Ma Peng, Bai Yun, Zhu Jie and Liu Jian, “ICP etching of high Al concentration AlGaN” IEEE 16th International Symposium on the Physical & Failure Analysis of Integrated Circuits, 2009, 7,Suzhou China, P142-145
(2) 李誠(chéng)瞻，劉鍵，劉新宇，薛麗君，陳曉娟，和致經(jīng)，“AlN插入層與AlGaN/GaN HEMT電流崩塌效應(yīng)的關(guān)系”， 《半導(dǎo)體學(xué)報(bào)》，27(6)，2006，p:1055-1058
(3) Xiao Dongping, Liu Jian, Wei Ke, He Zhijing, Liu Xinyu, Wu Dexin CHINESE JOURNAL OF SEMICONDUCTORS Vol.24,No.9, Sep.2003, PP 907-910 <
(4) Liu Jian, Zheng Yingkui, Wei Ke, Chen Xiaojuan, Shao Gang, He Zhijing, Liu Xinyu, Qian He, Wu Dexin, 《PROCEEDINGS OF THE SEVENTH CHINA-JAPAN SYMPOSIUM ON THIN FILMS》, Si3N4 effects on the performance of AlGaN/GaN HEMTs, 2004 9， Cheng-Du，China，P74
(5) Jian Liu, Pei-xuan Wang, “A Photoluminescence Study of the Defects Induced by Neutron Irradiation and Rapid Annealing in SI-GaAs”, Journal of Applied Physics Vol.86, No.2, (1999) 764-767
(6) Jian Liu, Pei-xuan Wang, “A Rapid Annealing Study of Neutron-Irradiated GaAs by Rutherford Backscattering Spectrometry/Channeling”, J. of Vacuum Science and Technology B, Vol.17, No.5, (1999) 2040-2044
(7) Pei-xuan Wang, Jian Liu, Yu Wang, and Baogui Shi, “Investigation of SiC Films Deposited onto Stainless Steel and Their Retarding Effects on Tritium Permeation”, 11th International Conference on Surface Modification of Metals by Ion Beams, Beijing, China, September 19-24,1999 (Published on: Surface & coating technology, 128(2000), 99)
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