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1，GaN大功率開關(guān)器件技術(shù)

2，GaN ED電路研究，國家科技重大專項(xiàng)項(xiàng)目

3，GaN開關(guān)功放芯片研究，國家自然科學(xué)基金項(xiàng)目

1] Weijun Luo, Hui Liu, Zongjing Zhang, Pengpeng Sun, Xinyu Liu, “High-Power X -Band 5-b GaN Phase Shifter With Monolithic Integrated E/D HEMTs Control Logic”, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 64, Issue 9, pp. 3627-3633, 2017

[2] Hui Liu, Zongjing Zhang and Weijun Luo** (Corresponding Author), “Analysis of reverse gate leakage mechanism of AlGaN/GaN HEMTs with N2 plasma surface treatment”, Solid State Electronics, vol. 144, Pages 60-66, June 2018；

[3] Pengpeng Sun, Hui Liu, Zongjing Zhang, Miao Geng, Rong Zhang, Weijun Luo** (Corresponding Author), “X-band 5-bit MMIC phase shifter with GaN HEMT technology”, Solid-State Electronics 136 (2017) 18–23

[4] Weijun Luo, Xiaoliang Wang, Lunchun Guo, et al, “The effect of low temperature AlN interlayer on the growth of GaN epilayer on Si (111) by MOCVD”, Superlattices and Microstructures, 44 (2008) 153–159

[5] Weijun Luo, Xiaojuan Chen, Hui Zhang, Guoguo Liu, Yingkui Zheng, Xinyu Liu, “C-band GaN based linear power amplifier with 55.7% PAE”, Solid-State Electronics 54 (2010) 457–460

[6] LUO Wei-Jun, CHEN Xiao-Juan, YUAN Ting-Ting, PANG Lei, LIU Xin-Yu, “AlGaN/GaN Based Diodes for Liquid Sensing”, CHIN. PHYS. LETT. Vol. 30, No. 3 (2013) 037301

[7] W.J. Luo X.J. Chen, L. Pang, T.T. Yuan, X.Y. Liu, “A 24W Ku band GaN based power amplifier with 9.1 dB linear gain”, Microelectronics Journal, 43 (2012) 569–572

[8] W.J. Luo, X.J. Chen, C.Y. Yang, Y.K. Zheng, K. Wei, X.Y. Liu, “Stabilization network optimization of internally matched GaN HEMTs”, Microelectronics International, Vol.28 Iss:2, pp. 34-37 (2011)

[9] Weijun Luo, Xiaoliang Wang, Lunchun Guo, et al, “Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si (111) by MOCVD”, Microelectronic Journal, 39 (2008) 1710–1713