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2008年8月–2012年5月，法國(guó)里昂國(guó)立應(yīng)用科學(xué)院，電力電子學(xué)與微電子學(xué)，博士?

2005年9月–2008年1月，北京交通大學(xué)，微電子學(xué)與固體電子學(xué)，碩士?

2001年9月–2005年7月，北京交通大學(xué)，電子工程系，學(xué)士?

工作簡(jiǎn)歷：?

2023.7-至今，中國(guó)科學(xué)院微電子研究所，研究員，抗輻照器件技術(shù)重點(diǎn)實(shí)驗(yàn)室主任

2022.4-2023.7，中國(guó)科學(xué)院微電子研究所，研究員，抗輻照器件技術(shù)重點(diǎn)實(shí)驗(yàn)室重組工作組組長(zhǎng)

2020.11-2022.4，中國(guó)科學(xué)院微電子研究所，研究員，硅器件中心副主任

2020.8-2020.11，中國(guó)科學(xué)院微電子研究所，研究員

2016.1-2020.8，中國(guó)科學(xué)院微電子研究所，副研究員

2012.10-2016.1，中國(guó)科學(xué)院微電子研究所，助理研究員

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期刊論文?

1、Maguang Zhu, Peng Lu, Xuan Wang, Qian Chen, Huiping Zhu, Yajie Zhang, Jianshuo Zhou, Haitao Xu, Zhengsheng Han, Jianwei Han, Rui Chen,* Bo Li,* Lian-Mao Peng, and Zhiyong Zhang*, "Ultra-Strong Comprehensive Radiation Effect Tolerance in Carbon Nanotube Electronics." SMALL 2022.

2、Peng Lu, Maguang Zhu, Peixiong Zhao, Chen Fan, Huiping Zhu, Jiantou Gao, Can Yang, Zhengsheng Han, Bo Li,* Jie Liu,* and Zhiyong Zhang*，"Heavy Ion Displacement Damage Effect in Carbon Nanotube Field Effect Transistors." ACS Appl. Mater. Interfaces 2023.

3、Yang Huang, Zhengshen Han, Fanyu Liu, Bo Li, Binhong Li, Jiantou Gao, Gang Zhang, Lei Wang, Duoli Li, Jian Jiao, Fazhan Zhao, and Tianchun Ye, "Total Ionizing Dose Radiation Effects Hardening Using Back-Gate Bias in Double-SOI Structure." IEEE Transactions on Nuclear Science, 2022.

4、Xu Zhang, Fanyu Liu, Bo Li, Can Yang, Yang Huang, Peng Lu, Siyuan Chen, Jinxing Cheng, Qingbo Wang, Ai Yu, Tiexin Zhang, Zhongshan Zheng, Qingzhu Zhang, Huaxiang Yin, and Jiajun Luo. "Comparison of Total Ionizing Dose Effects in SOI FinFETs Between Room and High Temperature." IEEE Transactions on Nuclear Science, 2022.

5、Yuchong Wang, Fanyu Liu, Bo Li, Binhong Li, Yang Huang, Can Yang, Junjun Zhang, Guoqing Wang, Jiajun Luo, Zhengsheng Han, and Konstaitin O. Petrosyants. "Dependence of Temperature and Back-Gate Bias on Single-Event Upset Induced by Heavy Ion in 0.2-μm DSOI CMOS Technology." IEEE Transactions on Nuclear Science, 2021.

6、Yuchong Wang, Siyuan Chen, Fanyu Liu, Jiantou Gao, Bo Li*, Binhong Li, Yang Huang, Jiangjiang Li, Chunlin Wang, Linfei Wang, Pengyu Cui, Shanshan Ma, Yiru Liao, Mengting Chen, Tianqi Wang, Jianli Liu, Chuan Huang, Peixiong Zhao, Jie Liu, Zhengsheng Han and Tianchun Ye, Mitigation of Single-Event Upset Sensitivity for 6T SRAM in a 0.18 μm DSOI technology Considering High LET Heavy Ions Irradiation, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2023.

7、Zexin Su, Bo Li*, Weidong Zhang, Jiantou Gao, Xiaohui Su, Gang Zhang, Hongyu Ren, Peng Lu, Fanyu Liu, Fazhan Zhao, Shi Li, Reliability Improvement on SRAM Physical Unclonable Function (PUF) Using an 8T Cell in 28 nm FDSOI, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022.

8、Jianying Dang, Xiaowu Cai, Longli Pan, Liang Shan,Yu Lu, Yafei Xie, XuPeng Wang, Shiping Wang, and Bo Li*, A Novel Reliability-enhanced Dual Over-temperature Protection Circuit with Delayed Thermal Restart for Power ICs, IEEE Transactions on Circuits and Systems II: Express Briefs, 2023.

9、Yun Tang, Lei Wang, Xiaowu Cai, Peng Lu, and Bo Li*, Investigation on performance degradation mechanism of GaN p–i–n diode under proton irradiation, Applied Physics Letters, 2023.

10、Yun Tang, Lei Wang, Huiping Zhu, Xiaowu Cai, Xuewen Zhang, Jiantou Gao, Ningyang Liu, Xingji Li, Jianqun Yang, Fazhan Zhao, and Bo Li*, Evolution and Mechanism of P-GaN Films Under Proton Irradiation and Its In?uence on Electronic Device, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022.