教育背景
2006.09-2011.07 中科院電子所 物理電子學專業(yè) 工學博士
2002.09-2006.07 西南交通大學 電子科學與技術(shù)專業(yè) 學士
工作簡歷
2018.03- 中科院微電子所 先導中心 副研究員
2011.07- 2018.03 中科院微電子所 先導中心 助理研究員
集成電路工藝與器件,金屬硅化物及接觸技術(shù)
1. 重大專項子課題“20納米平面體硅產(chǎn)品工藝及22納米FDSOI工藝”子任務(wù)“22nmFDSOI模型及工藝研究”,2017.07- , 工藝部分負責人,在研
2. 所長基金“DSOI”,2018.10- ,子課題負責人,在研
3. 國家自然科學基金青年基金“高性能低功耗體硅器件與埋氧器件的集成整合技術(shù)研究”, 2015.01- 2018.03, 技術(shù)骨干,結(jié)題
4. 02重大專項16/14nm項目課題1“ET-SOI 器件與關(guān)鍵工藝研究”,2013.1- 2016.4,技術(shù)骨干,結(jié)題
5. 02重大專項22nm項目課題6“工藝整合與集成技術(shù)”,2012.5-2014.6,技術(shù)骨干,結(jié)題6. 02重大專項“22納米關(guān)鍵工藝技術(shù)先導研究與平臺建設(shè)”課題2“高k/金屬柵工程”,2011.7-2012.5,技術(shù)骨干,結(jié)題
1. Xue Luo, Guilei Wang, Jing Xu*, Ningyuan Duan, Shujuan Mao, Shi Liu, Junfeng Li, Wenwu Wang, Dapeng Chen, Chao Zhao, Tianchun Ye and Jun Luo: Impact of Ge pre-amorphization implantation on forming ultrathin TiGexon both n- and p-Ge substrate. Japanese Journal of Applied Physics,2018, 57(7S)
2.Ningyuan Duan, Guilei Wang, Jing Xu*, Shujuan Mao, Xue Luo, Zhaozhao Hou, Wenwu Wang, Dapeng Chen, Junfeng Li, Shi Liu, Chao Zhao, Tianchun Ye and Jun Luo: Enhancing the thermal stability of NiGe by prior-germanidation fluorine implantation into Ge substrate. Japanese Journal of Applied Physics ,2018, 57(7S)
3. Zhaoyun Tang, Jing Xu, Hong Yang, Hushan Cui, Bo Tang, Yefeng Xu, Hongli Wang, Junfeng Li, and Jiang Yan: Impact of TaN as Wet Etch Stop Layer on Device Characteristics for Dual-Metal HKMG Last Integration CMOSFETs. IEEE Electron Device Letters, 2013 , 34 (12) :1488-1490
4. Hushan Cui, Jing Xu, Jianfeng Gao, Jinjuan Xiang, Yihong Lu, Zhaoyun Tang, Xiaobin He, Tingting Li, Jun Luo, Xiaolei Wang, Bo Tang, Jiahan Yu, Tao Yang, Jiang Yan, Junfeng Li, Chao Zhao: Evaluation of TaN as the Wet Etch Stop Layer during the 22nm HKMG Gate Last CMOS Integrations. Ecs Transactions, 2013, 58 (6) :111-118
5. Shu-Juan Mao, Jing Xu, Gui-Lei Wang, Jun Luo, Ning-Yuan Duan, Eddy Simoen, Henry Radamson, Wen-Wu Wang, Da-Peng Chen, Jun-Feng Li, Chao Zhao and Tian-Chun Ye: On the manifestation of Ge Pre-amorphization Implantation (PAI) in forming ultrathin TiSix for Ti direct contact on Si in sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology nodes. ECS J. Solid State Sci. Technol. 2017, 6 (9): 660-664
6. Hushan Cui, Jun Luo, Jing Xu, Jianfeng Gao, Jingjuan Xiang, Zhaoyun Tang, et al.:Investigation of tan as the wet etch stop layer for hkmg-last integration in the 22nm and beyond nodes cmos technology. Vacuum, 2015, 119, 185-188
7. Min Tian , Huicai zhong, Jing Xu, Li Li, Jun Luo, Zhigang Wang: Role of Ti electrode on the electrical characterization of filament within Al2O3 based antifuse. ECS Journal of Solid State Science and Technology ,2018,7(4)
8. Tang, Z., Tang, B., Xu, J., Xu, Y., Wang, H., & Li, J., et al. (2014): Integration of Advanced MOSFET Device with Dual Effective Band Edge Work Function Metals Using both HK and MG Last Scheme. ECS Meeting, 61: 253-259
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