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  • 姓名： 鄭中山
  • 性別： 男
  • 職稱(chēng)： 副研究員
  • 職務(wù)： 
  • 學(xué)歷： 博士
  • 電話(huà)： 82995522
  • 傳真： 
  • 電子郵件： zhengzhongshan@ime.ac.cn
  • 所屬部門(mén)： 硅器件與集成研發(fā)中心
  • 通訊地址： 北京市朝陽(yáng)區(qū)北土城西路3號(hào)

    簡(jiǎn)　　歷：

  • 教育背景：

    2002.9-2005.6：中國(guó)科學(xué)院半導(dǎo)體研究所，博士研究生； 

    1986.9-1989.6：山東大學(xué)物理系固體物理專(zhuān)業(yè)，碩士研究生； 

    1982.9-1986.6：山東大學(xué)物理系，本科； 

    工作簡(jiǎn)歷： 

    2010.10至今：中國(guó)科學(xué)院微電子研究所，副研究員； 

    1989.7-2010.9：濟(jì)南大學(xué)任教，助教，講師，副教授。 

    社會(huì)任職：

    研究方向：

  • 半導(dǎo)體材料與器件的輻射效應(yīng)

    承擔(dān)科研項(xiàng)目情況：

  • 1. 2005-2008: SOI材料的輻射效應(yīng)及表征，濟(jì)南大學(xué)博士基金； 

    2. 2011-2015: FD SOI技術(shù)的輻射效應(yīng)研究，中科院項(xiàng)目課題； 

    3. 2015-2016: SOI器件的單粒子輻射效應(yīng)模擬研究，復(fù)旦大學(xué)開(kāi)放基金； 

    4. 2017-2019：高k材料的輻射效應(yīng)研究，硅器件技術(shù)重點(diǎn)實(shí)驗(yàn)室基金。

    代表論著：

  • 1. Zheng, ZS; Liu, ZL; Zhang, GQ; Li, N; Li, GH; Ma, HZ; Zhang, EX; Zhang, ZX; Wang, X. Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation, Semiconductor Science and Technology, 2005, 20 (6): 481-484. 

    2. Zheng, ZS; Liu, ZL; Zhang, GQ et al. Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOI MOSFET. Chinese Physics B, 2005, 14(3): 565-570. 

    3. Zheng, ZS; Liu, ZL; Zhang, GQ; Li, N; Fan, K; Zhang, EX; Yi, WB; Chen, M; Wang, X. Effects of techniques of implanting nitrogen into buried oxide on the characteristics of partially depleted SOI PMOSFET, Chinese Physics Letters, 2005, 22 (3): 654-656. 

    4. Zheng Zhong-Shan, Zhang En-Xia, Liu Zhong-Li et al. Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density. Acta Physica Sinica, 2007, 56(9): 5446-5451. 

    5. Tang Hai-Ma, Zheng Zhong-Shan, Zhang En-Xia, Yu Fang, Li Ning and Wang Ning-Juan. Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers. Chinese Physics B, 2010, 19(10): 106106. 

    6. Zheng Zhong-Shan, Liu Zhong-Li, Yu Fang et al. Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide. Chinese Physics B, 2012, 21(11): 116104. 

    7. Zhang Bai-Qiang, Zheng Zhong-Shan,Yu Fang et al. Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials. Acta Physica Sinica, 2013, 62(11): 117303. 

    8. Zhongshan Zheng, Zhentao Li, Ning Qiao et al. Reducing single event upset by lowering the threshold voltage of transistors. IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014. 

    9. Zheng Zhong-Shan, Li Zhen-Tao, Qiao Ning et al. Comparison of decoupling resistors and capacitors for increasing the single event upset resistance of SRAM cells. IEEE 11th International Conference on ASIC (ASICON), 2015. 

    10. ZHAO Xing, ZHENG Zhong-Shan, LI Bin-Hong et al. Total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator pMOSFETs. Chinese Physics C, 2015, 39(9): 096101, 1-7. 

    11. Zhongshan Zheng, Jin Ning, Baiqiang Zhang et al. The radiation hardness of the nitrogen-fluorine implanted buried oxide layer in silicon-on-insulator materials against higher total dose irradiation. SCIENCE CHINA Materials, 2016, 59(8): 657-664. 

    12. Zhong-Shan Zheng, Bin-Hong Li, Jian-Tou Gao, Jia-Jun Luo, Zheng-Sheng Han. Complexity of the Total Dose Radiation Response of Fully Depleted Silicon-On-Insulator NMOSFETs. IEEE 13th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2016. 

    13. Zhongshan Zheng, Zhentao Li, Gengsheng Chen, Jiajun Luo, Zhengsheng Han. Roles of the Gate Length and Width of the Transistors in Increasing the Single Event Upset Resistance of SRAM cells. IEEE 12th International Conference on ASIC (ASICON), 2017. 

    14. Ling Yang , Qingzhu Zhang, Yunbo Huang, Zhongshan Zheng, Bo Li, Binhong Li, Xingyao Zhang, Huiping Zhu, Huaxiang Yin, Qi Guo, Jiajun Luo, and Zhengsheng Han. Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation. IEEE Transactions on Nuclear Science, 2018, 65(8): 1503. 

    15. H P Zhu, Z S Zheng, B Li, B H Li, G P Zhang, D L Li, J T Gao, L Yang, Y Cui, C P Liang, J J Luo and Z S Han. Total dose effect of Al2O3-based metal–oxide–semiconductor structures and its mechanism under gamma-ray irradiation. Semicond. Sci. Technol. 2018, 33: 115010. 

    16. Zhong-Shan Zheng, Zhen-Tao Li, Kai Zhao, Bo Li, Jia-Jun Luo, Zheng-Sheng Han. Correlation between the Decoupling Capacitor Layouts and Single-Event-Upset Resistances of SRAM cells. IEEE 14th International Conference on Solid-State and Integrated Circuit Technology, 2018. 

    17. Hui-Ping Zhu, Xi Chen, Zhong-Shan Zheng, Bo Li, Jian-Tou Gao, Duo-Li Li, Jia-Jun Luo, and Zheng-Sheng Han. Investigation of the relationship between the total dose effect and thickness of Al2O3 gate dielectric under gamma-ray irradiation. IEEE 14th International Conference on Solid-State and Integrated Circuit Technology, 2018. 

    18. J. Zhang, X. Chen, L. Wang, Z. S. Zheng, H. P. Zhu, B. Li, J. T. Gao, D. L. Li, J. J. Luo, Z. S. Han, C. Song, and X. Y. Liu. Studies of radiation effects in Al2O3-based metal-oxide-semiconductor structures induced by Si heavy ions. J. Appl. Phys. 2019, 125: 115701. 

    19. Zhongshan Zheng, Huiping Zhu, Xi Chen, Lei Wang, Bo Li, Jiantou Gao, Duoli Li, Jiajun Luo, Zhengsheng Han, Xinyu Liu, and Jie Liu. Combined Effects of Tantalum Ion and Gamma Ray Irradiations on MOS Devices with Atomic Layer Deposited Al2O3 Gate Dielectrics. Radiation and its Effects on Components and Systems (RADECS) 2019. 

    20. Zhongshan Zheng, Xing Zhao, Kai Zhao, Jiantou Gao, Binhong Li, Fang Yu, Bo Li, Jiajun Luo, Zhengsheng Han and Xinyu Liu. Comparison of the Total Dose Responses of Fully Depleted SOI nMOSFETs with Different Geometries for the Worst Case Bias Conditions. IEEE Transactions on Nuclear Science, 2019, DOI 10.1109/TNS.2019.2936607. 

    21. Zhongshan Zheng, Zhentao Li, Bo Li, Jiajun Luo, Zhengsheng Han. Influences of the Source and Drain Resistance of the MOSFETs on the Single Event Upset Hardness of SRAM cells. IEEE 13th International Conference on ASIC (ASICON), 2019.

    專(zhuān)利申請(qǐng)：

    獲獎(jiǎng)及榮譽(yù)：

  • 在濟(jì)南大學(xué)任教期間，曾兩次獲得濟(jì)南大學(xué)優(yōu)秀教師榮譽(yù)稱(chēng)號(hào)。