教育背景
2010.09-2014.12 香港科技大學(xué) 電子及計算機(jī)科學(xué) 工學(xué)博士
2007.09-2010.06 電子科技大學(xué) 微電子與固體電子學(xué) 工學(xué)碩士
2003.09-2007.07 電子科技大學(xué) 電子科學(xué)與技術(shù) 工學(xué)學(xué)士
工作簡歷
2021.02-至今 中國科學(xué)院微電子研究所 研究員
2015.02-2021.02 華為技術(shù)有限公司 主任工程師
1、北京市科委港澳合作項(xiàng)目 超薄勢壘Si基GaN增強(qiáng)型器件與單片集成技術(shù) 項(xiàng)目負(fù)責(zé)人 2021.8-2023.8?
2、中科院微電子所所長基金項(xiàng)目 GaN功率器件可靠性增強(qiáng)技術(shù)研究 項(xiàng)目負(fù)責(zé)人 2022.1-2025.121.?Tiantian Luan; Qimeng Jiang; Sen Huang; Xinhua Wang; Hao Jin; Fuqiang Guo; Yixu Yao; Jie Fan; Haibo Yin; Ke Wei; Yankui Li; Haojie Jiang; Junfeng Li; Xinyu Liu,“Investigation of trapping/de-trapping dynamics of surface states in AlGaN/GaN high-electron mobility transistors based on dual-gate structures”,Microelectronic Engineering, 2023?
2.?Hao Jin; Qimeng Jiang; Sen Huang; Xianping Wang; Yingjie Wang; Zhongchen Ji; Xinyue Dai; Chao Feng; Jie Fan; Ke Wei; Jianxun Liu; Yaozong Zhong; Qian Sun; Xinyu Liu,” An Enhancement-Mode GaN p-FET With Improved Breakdown Voltage”, IEEE Electron Device Letters, 2022?
3.?Yixu Yao; Qimeng Jiang; Sen Huang; Xinhua Wang; Lan Bi; Hao Jin; Xinyue Dai; Yifei Huang; Jie Fan; Ke Wei; Jinjuan Xiang; Haojie Jiang; Junfeng Li; Wenwu Wang; Xinyu Liu,” Investigation of Dynamic-QGD on Enhancement-Mode AlGaN/GaN MIS-HEMTs with SiNx Passivation Dielectric”, 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022. ?
4.?Lan Bi; Yixu Yao; Qimeng Jiang; Sen Huang; Xinhua Wang; Hao Jin; Xinyue Dai; Zhengyuan Xu; Jie Fan; Haibo Yin; Ke Wei; Xinyu Liu,” Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs”, Journal of Semiconductors, 2022?
5.?Yixu Yao; Qimeng Jiang; Sen Huang; Xinhua Wang; Xiaorong Luo; Hao Jin; Fuqiang Guo; Haibo Yin; Jingyuan Shi; Haojie Jiang; Junfeng Li; Wenwu Wang; Bo Shen; Ke Wei; Xinyu Liu,“Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy”, Applied Physics Letters, 2021?
6.?Lan Bi; Qimeng Jiang; Sen Huang; Xinhua Wang; Yingjie Wang; Yuchen Li; Fuqiang Guo; Luan, Tiantian; Yang Liu; Jie Fan; Haibo Yin; Ke Wei; Yingkui Zheng; Yankui Li; Xinyu Liu,“Impact of Vth Insability on Time-Resolved Characteristics of MIS-HEMT-Based GaN Power IC”,IEEE Electron Device Letters,2021?
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