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[1] Tiancheng Gong, Lihua Xu, Wei Wei, Pengfei Jiang, Peng Yuan, Bowen Nie, Yuanquan Huang, Yuan Wang, Yang Yang, Jianfeng Gao, Junfeng Li, Jun Luo, Lingfei Wang*, Jianguo Yang*, Qing Luo*, Ling Li, Steve S Chung, Ming Liu, "First Demonstration of a Design Methodology for Highly Reliable Operation at High Temperature on 128kb 1T1C FeRAM Chip", in 2023 Symposium on VLSI Technology, IEEE, 2023. 第一作者；

[2] Tiancheng Gong, Qiqiao Wu, Yuanquan Huang, Haijun Jiang, Jianguo Yang*, Qing Luo*, Steve S Chung, Ming Liu,“First Demonstration of a Bayesian Machine based on Unified Memory and Random Source Achieved by 16-layer Stacking 3D Fe-Diode with High Noise Density and High Area Efficiency", in 2023 IEEE International Electron Devices Meeting (IEDM), 2023, IEEE, 2023. 第一作者；

[3] Tiancheng Gong, Lei Tao, Junkang Li, Yan Cheng, Yannan Xu, Wei Wei, Pengfei Jiang, Peng Yuan, Yuan Wang, Yuting Chen, Yaxin Ding, Yang Yang, Yan Wang, Bing Chen, Qing Luo*, Steve S Chung, Shixuan Du, Ming Liu,“10⁵× Endurance Improvement of FE-HZO by an Innovative Rejuvenation Method for 1z Node NV-DRAM Applications", in 2021 Symposium on VLSI Technology, IEEE, 2021. 第一作者；

[4] Tiancheng Gong, Qiao Hu, Danian Dong, Haijun Jiang, Jianguo Yang, Xiaoxin Xu, Xiaoming Chen, Qing Luo, Qi Liu, Steve S Chung, Hangbing Lyu, Ming Liu,“A 128kb stochastic computing chip based on RRAM flicker noise with high noise density and nearly zero autocorrelation on 28-nm CMOS platform", in 2021 IEEE International Electron Devices Meeting (IEDM), 2021, IEEE, 2021. 第一作者；

[5] Yuanquan Huang, Hongye Yuan, Bowen Nie, Tiancheng Gong*, Yuan Wang, Shuxian Lv, Pengfei Jiang, Wei Wei, Yang Yang, Junshuai Chai, Zhicheng Wu, Xiaolei Wang*, Qing Luo*, “Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation", Applied Physics Letters, vol. 124, no. 13, pp. 133504, 2024. 通訊作者；

[6] Yuanquan Huang, Hongye Yuan, Tiancheng Gong*, Yuan Wang, Pengfei Jiang, Wei Wei, Yang Yang, Junshuai Chai, Zhicheng Wu, Xiaolei Wang*, Qing Luo*, “In-Depth Understanding of Nitridation-Induced Endurance Enhancement in FeFETs: Defect Properties and Dynamics Characterized by Nonradiative Multi-Phonon Model", IEEE Transactions on Electron Devices, vol. 71, no. 9, pp. 5388-5392, 2024. 通訊作者；

[7] Bowen Nie, Yuanquan Huang, Yuan Wang, Yuting Chen, Yaxin Ding, Boping Wang, Yang Yang, Pengfei Jiang, Wei Wei, Tiancheng Gong*, Qing Luo*，“Thermal Induced P_rDegradation Under Low-Voltage Operation in HfZrO Ferroelectric Film: Phenomenon and Underlying Mechanism", IEEE Electron Device Letters, vol. 44, no. 9, pp. 1456?- 1459, 2023. 通訊作者；

[8] Tiancheng Gong, Junkang Li, Haoran Yu, Yannan Xu, Pengfei Jiang, Yuhao Wang, Peng Yuan, Yuan Wang, Yuting Chen, Yaxin Ding, Yang Yang, Yan Wang, Bing Chen, Qing Luo*，“Observation and characterization of recoverable fatigue process under low-electric field (<1.8 MV/cm) in HfZrO ferroelectric film", IEEE Electron Device Letters, vol. 42, no. 9, pp. 1288-1290, 2021. 第一作者；

[9] Tiancheng Gong, Danian Dong, Qing Luo, Xiaoxin Xu, Jianguo Yang, Jie Yu, Qingting Ding, Hangbing Lv*, Ming Liu, “Quantitative analysis on resistance fluctuation of resistive random access memory by low frequency noise measurement", IEEE Electron Device Letters, vol. 42, no. 3, pp. 312-314, 2021. 第一作者；

[10]?Tiancheng Gong, Yuhao Wang, Haoran Yu, Yannan Xu, Pengfei Jiang, Peng Yuan, Yuan Wang, Yuting Chen, Yaxin Ding, Yang Yang, Yan Wang, Qing Luo*, “Investigation of endurance behavior on HfZrO-based charge-trapping FinFET devices by random telegraph noise and subthreshold swing techniques", IEEE Transactions on Electron Devices, vol. 68, no. 7, pp. 3716-3719, 2021. 第一作者.