| 專著名稱: | Technical Digest of Frontiers in Electronic Materials |
| 研究中心: | |
| 首席研究員: | |
| 主編單位: | Technical Digest of Frontiers in Electronic Materials |
| 出版時間: | 2012-06-17 |
| 出版社: | |
| 主編: | |
| 編寫人員: | 劉明 |
| 總字?jǐn)?shù): | |
| 編者字?jǐn)?shù): | |
| 著作性質(zhì): | 電子、通信與自動控制技術(shù) |
| 編輯出版單位: | Technical Digest of Frontiers in Electronic Materials |
| 出版資助單位: | |
| 再版次數(shù): | |
| 印刷數(shù)量: | |
| 參編內(nèi)容: | 導(dǎo)電細絲在基于氧化物固態(tài)電解質(zhì)RRAM中的動態(tài)生長與溶解 |
| 著作簡介: | Electric field or current induced resistance switching (RS) effect is an intriguing phenomenon that forms the basis for potential applications in fast speed and ultra-high density nonvolatile memories. An essential issue for continued device research in this field is to uncover the physical mechanism of RS process, which still remains elusive due to the lack of direct experimental evidence. Here, we present an effective approach to capture the microstructure changes of Cu (or Ag)/ZrO2/Pt systems at atomic resolutions when adding electrical signals on the device by using in-situ transmission electron microscope (TEM) technology. On the basis of this approach, we directly verify the existence of conductive filament (CF) and address several unresolved fundamental issues related to the RS effect, including the starting point of CF growth/dissolution, the direction of CF growth/dissolution, the number of filaments formed under the SET process, and the degree of CF dissolution under the RESET process. We find that the CFs start growth from anode (Ag or Cu) toward the cathode (Pt), which is contrary to the general belief of electrochemical metallization theory. We suggest that the differences of cations solubility and diffusion coefficient between traditional solid-electrolyte and oxide-electrolyte materials should be taken into consideration. Based on the results, a modified microscopic mechanism based on the local redox reaction inside the oxide-electrolyte system is suggested to account for observed RS effect. It is noteworthy that the methodology reported in here can be easily extended to other RRAM systems, which will guide us to understand the origin nature of RS behaviors more clearly and optimize the performances of RRAM device with effective methods. |
| 其它備注: | 國外出版-外文 |
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