| 專著名稱: | IMW2012 |
| 研究中心: | |
| 首席研究員: | |
| 主編單位: | IMW2012 |
| 出版時(shí)間: | 2012-05-20 |
| 出版社: | |
| 主編: | |
| 編寫人員: | 劉明 |
| 總字?jǐn)?shù): | |
| 編者字?jǐn)?shù): | |
| 著作性質(zhì): | 電子、通信與自動(dòng)控制技術(shù) |
| 編輯出版單位: | IMW2012 |
| 出版資助單位: | |
| 再版次數(shù): | |
| 印刷數(shù)量: | |
| 參編內(nèi)容: | 一維厚度可縮小性對RRAM器件性能的研究 |
| 著作簡介: | Scaling is a key issue for resistive switching (RS) memory before commercialization. In this paper, for the first time, we reveal the impact of electrode diffusion on the device performance as the thickness of RS material scaling. Serious deterioration of on/off ratio and device yield was observed when the material scaled below 3 nm. A new method of two-step electrode deposition accompanied with re-oxidization process was employed to overcome this problem. Significant improvements of device performance such as low RESET current (~1 μA), high on/off ratio (100x) and 100% device yield were achieved thereafter. |
| 其它備注: | 國外出版-外文 |
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