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論文

論文題目 作者 刊物名稱(chēng) 發(fā)表年度
High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure 黃森; IEEE Electron Device Letters 2016
Application of PGD on Parametric Modeling of a Piezoelectric Energy Harvester ; IEEE Transactions on Magnetics 2016
3-D IC Interconnect Capacitance Extraction Using Dual Discrete Geometric Methods With Prism Elements ; IEEE Transactions on Very Large Scale Integration (VLSI) Systems 2016
60 GHz Indoor Propagation With Time-Domain Geometric-Optics ; IEEE Transactions on Magnetics 2016
Numerical Analysis of Discrete Geometric Method on Plasmonic Structures ; IEEE Transactions on Magnetics 2016
Computation of sensitivities of IC interconnect parasitic capacitances to the process variation with dual discrete geometric methods 高展; Journal of Semiconductors 2016
A 1V, 1.1mW mixed-signal hearing aid SoC in 0.13um CMOS process 陳鋮穎; 2016 IEEE International Symposium on Circuits and Systems 2016
A 128 Kb HfO2 ReRAM with Novel Double-Reference and Dynamic-Tracking scheme for write yield improvement 陳鋮穎; IEICE Electronics Express 2016
A Double-References and Dynamic-Tracking scheme for writing bit-yield improvement of ReRAM 陳鋮穎; The IEEE 13th International Conference on Solid-State and Integrated Circuit Technology 2016
A PVT variation tolerant and low power 5Gbs clock and data recovery circuit for PCI-E 2.0USB 3.0 張鋒; The IEEE 12th International Conference on ASIC 2016
一種全集成磁敏生物傳感器模擬前端電路 ; 微電子學(xué)與計(jì)算機(jī) 2016
Progress in flexible organic thin-film transistors and integrated circuits 陸叢研; SCIENCE BULLETIN 2016
自適應(yīng)偏置SOI CMOS功率放大器的設(shè)計(jì) 胡世林; 微電子學(xué) 2016
A Novel IGBT Structure With Floating N-Doped Buried Layer in P-base to Suppress Latch-Up 楊飛; IEEE Electron Device Letters 2016
IGBT載流子增強(qiáng)技術(shù)發(fā)展概述 沈千行; 半導(dǎo)體技術(shù) 2016