最新精品国偷自产在线美女足_国产午夜精华无码网站_天天爱天天做狠狠久久做_国产片免费福利片永久_欧美国产成人精品一区二区三区

    當(dāng)前位置 >>  首頁(yè) >> 科研工作 >> 科研產(chǎn)出 >> 論文

論文

論文題目 作者 刊物名稱 發(fā)表年度
Bulk FinFETs with body spacers for improving fin height variation 魏星; Solid-State Electronics 2016
Thermal atomic layer deposition of TaAlC with TaCl5 and TMA as precursors 項(xiàng)金娟; ECS Journal of Solid State Science and Technology 2016
Understanding the role of TiN barrier layer on electrical performance of MOS device with ALD-TiN/ALD-TiAlC metal gate stacks 項(xiàng)金娟; ECS Journal of Solid State Science and Technology 2016
Microcontroller susceptibility variations to EFT burst during accelerated aging ; Microelectronics Reliability 2016
Investigation of N type metal TiAlC by thermal atomic layer deposition using TiCl4 and TEA as precursors 項(xiàng)金娟; ECS Journal of Solid State Science and Technology 2016
Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate 項(xiàng)金娟; Solid-State Electronics 2016
Improved Single-Event Hardness of Trench Power MOSFET with a Widened Split Gate 陸江; radiation effects on components & systems conference 2016
Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl4 and TMA precursors 項(xiàng)金娟; Chin. Phys. B 2016
Atomic layer deposition assisted pattern transfer technology for ultra-thin block copolymer films 陳文輝; Thin Solid Films 2016
Analysis of multi-e-beam lithography for cutting layers at 7-nm node 趙利俊; Journal of Micro/Nanolithography, MEMS, and MOEMS 2016
A Novel Nanofabrication Technique of Silicon-Based Nanostructures 孟令款; Nanoscale Research Letters 2016
Gate patterning in 14 nm and beyond nodes: from planar devices to three dimensional Finfet devicesLingkuan 孟令款; Applied Surface Science 2016
Novel top-down fabrication of Si-based nanostructures with sub-20nm scale 孟令款; IEEE 13th International Conference on Solid-State and Integrated Circuit Technology 2016
Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer 羅維春; Microelectronics Reliability 2016
Spin diffusion in disordered organic semiconductors 李泠; Physical Review B 2016