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論文

論文題目 作者 刊物名稱 發(fā)表年度
Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation 徐昊; Chinese Physics B 2016
An improved cut-off frequency model with a modified small-signal equivalent Graphene circuit in Field-Effect Transistors 汪令飛; IEEE Electron Device Letters 2016
Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-K metal gate NMOSFET with kMC TDDB simulations 徐昊; Chinese Physics B 2016
Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device 徐秋霞; Solid-State Electronics 2016
Investigation of tunneling layer and inter-gate-dielectric engineered TaN floating gate memory 姜丹丹; Integrated Ferroelectrics 2016
Integration of Selective Epitaxial Growth of SiGe/Ge layers in 14nm Node FinFETs 王桂磊; ECS Transactions 2016
基于空間分光的納米級(jí)調(diào)焦調(diào)平測(cè)量技術(shù) 孫裕文; 光學(xué)學(xué)報(bào) 2016
Impact of Critical Geometry Dimension on Channel Boosting Potential in 3D NAND Memory 姜丹丹; 2016 IEEE 13th International Conference on Solid-State and Integrated Circuit Technology 2016
Study of Silicon Pixel Sensor for Synchrotron Radiation Detection 李貞杰; Chinese Physics C 2016
A Low Voltage SRAM Sense Amplifier with Offset Cancelling Using Digitized Multiple Body 劉冰燕; IEEE Transactions on Circuits and Systems II: Express Briefs 2016
Silicon photonics process development based on a 200-mm CMOS platform 李志華; Proc. of SPIE 2016
一種新型雙重圖形技術(shù)拆分方法 于麗賢; 《微納電子技術(shù)》 2016
Simulation On Threshold Voltage Of L-Shaped Bottom Select Transistor In 3D NANDFlash Memory 張瑜; 2016 IEEE 13th International Conference on Solid-State and Integrated Circuit Technology 2016
Design technology co-optimization for 14/10nm metal1 double patterning layer 段英麗; SPIE Advanced Lithography，International Society for Optics and Photonics 2016
納米光刻中調(diào)焦調(diào)平測(cè)量系統(tǒng)的工藝相關(guān)性 孫裕文; 光學(xué)學(xué)報(bào) 2016